This semiconducting glass was bombarded with 75MeV 58Ni6+ ions, at room temperature, to fluences of 2 x 1013 or 5 x 1013/cm2. Irradiation-induced effects in bombarded and sequentially annealed (100 to 220C) material were investigated by measuring the temperature dependence of the direct-current conductivity, and the frequency (100Hz to 10kHz) and temperature dependences of the alternating-current conductivity and dielectric relaxation at temperatures of between 180 and 450K. The data indicated that ion-induced defects and complexes in the bombarded material became electrically active upon annealing, and introduced localized states near to the Fermi level. Bombardment and subsequent annealing introduced inhomogeneities, with a distribution of simple defects and clusters in the bulk of the material.

K.L.Bhatia, P.Singh, N.Kishore, S.K.Malik: Philosophical Magazine B, 1995, 72[4], 417-33