The interface between ZnS and Si(001) was studied by using transmission electron microscopy. It was found that stacking faults were the predominant microstructural defect in the ZnS films. Higher quality interfaces and better ZnS films were obtained when As-terminated Si(001) surfaces were used as the substrate. It was also found that the stacking fault density was much lower and qualitatively different, when compared with interfaces that were formed without an As monolayer. Stacking faults in only one of the two possible orientations were observed for ZnS that was grown onto non As-terminated Si(001). These results were compared with those for ZnSe/Si and GaAs/Si, and it was concluded that the lattice-match did not play as great a role as did chemical compatibility at the interface.

L.T.Romano, R.D.Bringans, X.Zhou, W.P.Kirk: Physical Review B, 1995, 52[15], 11201-5