Compensating acceptors and donors in N -doped epilayers which had been grown by molecular beam epitaxy, using a N radio-frequency plasma source, were studied by using photoluminescence and photoluminescence excitation spectroscopic techniques. The temperature dependence of the photoluminescence and photoluminescence excitation spectra that were obtained from the N -doped layers was investigated. A deep acceptor and a deep donor, with ionization energies of about 0.170 and 1.188eV, were identified. These 2 deep centers were attributed to N clusters: NSe-Zn-NSe in the case of the deep acceptor, and NSe-NZn in the case of the deep donor.

Z.Zhu, G.D.Brownlie, G.Horsburgh, P.J.Thompson, S.Y.Wang, K.A.Prior, B.C.Cavenett: Applied Physics Letters, 1995, 67[15], 2167-9