Thin (less than 80nm) ZnSe layers which had been grown onto (001)-oriented GaAs contained various partially, and fully, pyramidal configurations of triangular {111} stacking faults whose apices were at, or close to, the interface. It was found that one arrangement of these fault groupings exhibited extrinsic-type strong-beam characteristics, but exhibited 2 distinct types of contrast when examined under specific weak-beam conditions. The contrast behavior was considered with respect to that which was expected for various model structures for the overlapping groupings; as suggested by high-resolution edge-on examinations.

C.Y.Chen, W.M.Stobbs, E.G.Bithell: Philosophical Magazine A, 1995, 72[5], 1173-88