Thin films of NiSi2 were grown onto (110) Si substrates, and  = 3 NiSi2(111)||Si(111) and NiSi2(115)||Si(111) micro-facets were studied. A chain unit model was considered for the latter interface, and 2 different domain-related atomic faceting structures were found for it. A ¼<111> junction dislocation which was present in the junction of the  = 3 NiSi2(111)||Si(111) and NiSi2(115)||Si(111) micro-facets was related to differing rigid-body translations. As the thin NiSi2 film migrated, the NiSi2(115)||Si(111) interface bowed further towards the NiSi2(001)||Si(221) and NiSi2(114)||Si(110) interfaces. The atomic structures of NiSi2(115)||Si(111), NiSi2(001)||Si(221) and NiSi2(114)||Si(110) interfaces could be explained in terms of a chain unit model. The migration of these interfaces could be assisted by a dislocation/step which was similar to diffusion-induced grain boundary migration, or by short-range diffusion without dislocation/step assistance.

W.J.Chen, F.R.Chen: Materials Science Forum, 1995, 189-190, 135-42