The temperature dependences of the diffusion coefficients of several 3d-transition elements in single crystals were studied after implanting radiotracer ions. Oxide hold-up effects and solubility problems, which had led to complicated diffusion profiles in some previous studies, were almost completely avoided here. These transition elements were diffusers which had high activation enthalpies and pre-exponential factors. Most of them had extremely low diffusivities when compared with the self-diffusion of Al. On the other hand, non-transition elements had diffusion rates which were similar to, or slightly higher than, the self-diffusivity. Also, their activation enthalpies were not very different to the activation enthalpy for self-diffusion.

G.Rummel, T.Zumkley, M.Eggersmann, K.Freitag, H.Mehrer: Zeitschrift für Metallkunde, 1995, 85[2], 122-30