Defects in nano-crystals which had been deposited onto thinned (110) Si substrates were studied by means of 200kV ultra-high vacuum transmission electron microscopy. The nano-crystals were between 2 and 10nm in size and contained several types of defect which were observable in the [110] direction. High-resolution transmission electron microscopy indicated that the most frequently observed defects in the particles were stacking faults, twins and Frank partial dislocations. Structural fluctuations in the nano-crystals were recorded, and demonstrated the movement and annihilation of the defects. Frank partial dislocations and twin boundaries moved within 1s.

Defects and their Movement in Pb and Ge Nanocrystals Characterized by Ultra-High Vacuum High Resolution Transmission Electron Microscope. Y.Wu, M.Takeguchi, Q.Chen, K.Furuya: Applied Surface Science, 2000, 159-160, 486-91