Single-phase c-axis aligned La1.85Sr0.15Cu1-yZnyO4 films, with y-values of up to 0.12, were grown by pulsed-laser deposition. Property measurements indicated the existence of defects, in addition to the Zn impurities, that were unintentionally introduced during film growth. These defects were suggested to be O vacancies, and had a distinctly different effect, to that of Zn, upon the critical temperature. The separation of the 2 effects resolved earlier ambiguities in the observed rates of depression of the critical temperature.

Resistive and Structural Properties of La1.85Sr0.15Cu1-yZnyO4 Films. M.Z.Cieplak, K.Karpińska, J.Domagała, E.Dynowska, M.Berkowski, A.Malinowski, S.Guha, M.Croft, P.Lindenfeld: Applied Physics Letters, 1998, 73[19], 2823-5