A method was described that was based upon the electron beam induced current effect. It analyzed lateral dopant diffusion in planar devices, and permitted estimates to be made of the junction depth. The method was especially suitable for studying deep junctions, and did not require cleavage, or removal of the field oxide from the surface of the structure.

A.Boudjani, B.Sieber, L.Boudjani: Semiconductor Science and Technology, 1995, 10[8], 1151-5