A characterization method was presented which was likely to provide an improved defect detection sensitivity. This new technique involved the use of current-source biasing of a pn diode. Under current-source bias, the junction voltage was transient; whereas standard deep-level transient spectroscopy typically involved voltage-source bias with either capacitance or current transients. Computer simulations predicted voltage transients of 0.005V from samples that, under identical trap capture and emission conditions, yielded capacitance and current transients of only 0.2fF and 0.7pA. The new approach could tolerate large leakage currents, and the voltage transient amplitude was independent of the device area.

D.P.Rancour: Journal of Applied Physics, 1995, 78[9], 5431-8