Conditions were derived under which nucleation in twin orientation, on a so-called ‘edge’ facet during the Czochralski growth of semiconductors, was thermodynamically favored over nucleation in the correct orientation. The model was based upon the ideas of Voronkov, concerning the conditions which were necessary for the edge facets to be anchored at the 3-phase boundary. It was shown that the conditions were satisfied for GaAs, InSb and InSb, but not for Ge and Si. The main features of twinning in III-V compounds were accounted for, and necessary conditions for the avoidance of twinning were predicted.

D.T.J.Hurle: Journal of Crystal Growth, 1995, 147[3-4], 239-50