A computer method was used to simulate the growth of a face-centered cubic (111) crystal surface at which emerged outcrops of a stacking fault, 2 types of twin lamella bounded by 2 partial dislocations, and a dipole screw dislocation. A comparison was made of the stacking fault mechanism, the twin lamella mechanism and the screw dislocation mechanism. It was found that the screw dislocation mechanism was more active, than were the stacking fault or twin lamella mechanisms, at low super-saturations. The values of supersaturation under which the screw dislocation mechanism was more active were obtained for various temperatures. This showed that the critical super-saturation increased with decreasing temperature. In the case of the B-type twin lamella mechanism, the size of the twinned area was considered with respect to the activity of the defect mechanism.

H.Li, X.D.Peng, N.B.Ming: Journal of Crystal Growth, 1995, 149[3-4], 241-5