It was noted that low-energy ion bombardment, during preparation, could improve many aspects of film growth. On the other hand, confirmation of the atomistic mechanism which was responsible for these effects was difficult. Here, a simple model was presented for ion beam-assisted deposition as involving the interaction of growth-induced and ion-induced surface defects (adatoms and vacancies). Kinetic Monte Carlo simulations were used to demonstrate that low-energy ion bombardment, together with growth, produced a smoother surface morphology than did growth or ion bombardment alone. This was a consequence of the destabilization of surface clusters and the promotion of step-flow growth.

B.K.Kellerman, E.Chason, J.A.Floro, S.T.Picraux, J.M.White: Applied Physics Letters, 1995, 67[12], 1703-5