Cathodoluminescence microscopic techniques were used to study the spatial distribution of structural defects and deep levels in Ge-doped bulk crystals. The effect of Ge doping, to concentrations of 1017 or 1019/cm3, upon the compensation of VCd was investigated and the dependence of the intensity distribution of the cathodoluminescence emission bands upon the dopant concentration was studied. It was found that Ge doping caused a substantial reduction in the so-called 1.40eV luminescence, which was often seen in undoped CdTe crystals, and enhanced the 0.91 and 0.81eV emissions.

U.Pal, P.Fernández, J.Piqueras, N.V.Sochinskii, E.Diéguez: Journal of Applied Physics, 1995, 78[3], 1992-5