The diffusion of implanted Be in liquid-encapsulated Czochralski material was modelled by using a computer simulation. The so-called plus-one approach to defect generation after implantation, as well as the assumed existence of local Ga interstitial sinks, were successfully used to simulate a high Be diffusivity, up-hill diffusion and a time-dependent Bi diffusivity. The fast diffusion of implanted Be could be simulated by using the same intrinsic Bi diffusivity as that used in simulating the slow diffusion of molecular beam epitaxially grown-in Be. Account was taken of the roles which were played by extended defects and non-equilibrium Ga point defects in affecting the anomalous diffusion behavior of implanted Be.

J.C.Hu, M.D.Deal, J.D.Plummer: Journal of Applied Physics, 1995, 78[3], 1606-13