Expressions were derived for the depletion width and capacitance transient for traps which could be deep and of high concentration. The new results were compared with those which were obtained from commonly used formulae, and from an exact analysis. Good agreement was found with experimental deep-level transient spectroscopic data for EL2 in GaAs.

D.C.Look, J.R.Sizelove: Journal of Applied Physics, 1995, 78[4], 2848-50