Two deep electron traps were introduced by mismatch into relaxed GaAs1-xSbx layers, where x ranged from 0 to 3%, that had been grown onto GaAs substrates by means of liquid-phase epitaxy. They were revealed by using deep-level transient spectroscopy. One of the traps, which exhibited non-standard logarithmic capture kinetics and whose energy level was linked to the valence-band edge, was related to electron states that were associated with  dislocations. The other trap was attributed to the unexpected formation of the EL2 defect.

T.Wosinski, A.Makosa, T.Figielski, J.Raczynska: Applied Physics Letters, 1995, 67[8], 1131-3