A microscopic photoluminescence study was made of strained InAs0.5P0.5/InGaAsP quantum well crystals with between 2 and 14 wells. This method was useful for detecting misfit dislocations in the crystals; especially in the initial stages of generation. Cathodoluminescence and photoluminescence intensity profile measurements of a laser diode cavity showed that the intensity, being mainly affected by the [011]-oriented misfit dislocations, was closely related to the threshold current of the diode.

M.Nakao, H.Oohashi, T.Hirono, H.Kamada, H.Sugiura: Journal of Applied Physics, 1995, 78[5], 3462-6