The quasi-chemical reaction method was used to calculate the concentration of native point defects in these materials. It was found that an enrichment in In was related to the formation of InSb”, VSbx, and VAsx defects. The excess group-V elements were accommodated mainly via an interstitial dissolution mechanism. In going from InAs to InSb, the role of anti-structure disorder became more important. This led to an extension of the range of existence of InAsSb solid solutions.

G.V.Semenova, T.P.Sushkova, E.G.Goncharov: Neorganicheskie Materialy, 1995, 31[3], 304-7 (Inorganic Materials, 1995, 31[3], 283-6)