A study was made of defect control, in metalorganic vapor-phase epitaxial material, by means of O doping. Diethylaluminum ethoxide was used as an O precursor in order to provide intentional deep-level incorporation. It was found that diethylaluminum ethoxide doping of Si-doped InxGa1-xAs, with x = 0.25, resulted in a reduction in carrier concentration. The incorporation of Al and O depended weakly upon the alloy composition when x was less than 0.25. The degree of electrical compensation decreased with In content for a given O content. Deep-level transient spectroscopic investigations of a series of Si-doped and O-doped samples, where x ranged from 0 to 0.18, revealed a set of O-derived deep levels that were similar to those found in ethoxide-doped material. These characteristic deep levels appeared to remain at a relatively constant energy with respect to the valence band; as compared to the rapid decrease in the conduction band with x-value.

J.W.Huang, T.F.Kuech, T.J.Anderson: Applied Physics Letters, 1995, 67[8], 1116-8