The reverse leakage current in strained multiple quantum-well p-i-n structures was measured for a range of dimensions and strains. The magnitude of the leakage current was found to depend upon the average strain in the structure, the total structure thickness, and the thickness of the capping layer. Plan-view transmission electron microscopy showed that misfit dislocation arrays formed mainly at the upper and lower multiple quantum-well interfaces, and that the total density of these determined the leakage current.

J.P.R.David, Y.H.Chen, R.Grey, G.Hill, P.N.Robson, P.Kightley: Applied Physics Letters, 1995, 67[7], 906-8