The diffusion and incorporation characteristics of Zn dopants in organometallic vapor-phase epitaxially grown material were studied. The Zn diffusion coefficient depended strongly upon the concentration, and increased by 4 orders of magnitude for Zn concentrations of between 2 x 1018 and 8 x 1018/cm3. This marked concentration dependence of the Zn diffusion coefficient was shown to govern Zn incorporation during organometallic vapor-phase epitaxial growth. The spread of Zn dopants into intentionally undoped regions could result in high Zn dopant concentrations.

E.F.Schubert, C.J.Pinzone, M.Geva: Applied Physics Letters, 1995, 67[5], 700-2