A simple mathematical model, which was based upon a system of reaction-diffusion equations, made it possible to study the effect of defect interactions upon the effective diffusivity of implanted impurities and to determine the broadening of impurity profiles during annealing. It was shown that special initial conditions could give rise to anomalous diffusion processes, such as transient ones.

E.Antoncik: Radiation Effects and Defects in Solids, 1994, 129[3-4], 301-13