Buried B layers were grown epitaxially onto monocrystalline Si substrates and were subjected to steam oxidation at 650 to 750C, under pressures of 1, 5, or 15atm. The layers were approximately 200nm-thick and were capped with 400nm of undoped Si. The B concentration varied from 8 x 1017 to 4 x 1018/cm3. A resultant enhanced B diffusion was modelled by assuming that the oxidation maintained a supersaturation of interstitials, at the surface, which was proportional to the square root of the oxidation rate. It was found that the use of fully-coupled dopant-defect diffusion equations was necessary in order to model the oxidation-enhanced diffusion accurately.

R.F.Lever, P.B.Griffin, W.A.Rausch: Journal of Applied Physics, 1995, 78[5], 3115-20