Pulsed-laser melting experiments were performed on GexSi1-x alloys, where x was less than 0.10, which involved re-growth velocities that ranged from 0.25 to 3.9m/s. An analysis of post-solidification Ge concentration profiles, together with time-resolved melt-depth measurements, permitted the determination of the liquid-phase diffusivity of Ge in Si and of the dependence of the Ge partition coefficient upon interface velocity. A diffusivity of 0.00025cm2/s was deduced. The partition coefficient versus interface velocity data were analyzed by using various models: including the dilute and non-dilute continuous growth models. Extrapolation to zero velocity, by using these models, furnished an equilibrium partition coefficient of about 0.45 and a diffusive speed of 2.5m/s.

D.P.Brunco, M.O.Thompson, D.E.Hoglund, M.J.Aziz, H.J.Gossmann: Journal of Applied Physics, 1995, 78[3], 1575-85