The incorporation of H was studied under various electrochemical conditions, including anodization in fluoride solutions (where porous Si formed). The results suggested that there was a large near-surface H concentration, while simulations showed that the maximum penetration depth was governed by the volume diffusion of H and by material removal. The diffusion coefficients were found to depend upon the electrochemical conditions, and ranged from 10-13 to 10-11cm2/s.

P.Allongue, C.H.De Villeneuve, L.Pinsard, M.C.Bernard: Applied Physics Letters, 1995, 67[7], 941-3