Substrates were co-implanted with F and 2MeV Er. The implanted samples were first annealed (600C, 3h) in order to produce solid-phase epitaxial regrowth, and were then annealed (900C, 0.5h) in order to activate the Er atoms optically. Photoluminescence measurements revealed a marked enhancement of the luminescence intensity in samples which were implanted with F. It was suggested that this was due to the formation of Er-F complexes, and facilitated defect annealing in the Si lattice.

P.Liu, J.P.Zhang, R.J.Wilson, G.Curello, S.S.Rao, P.L.F.Hemment: Applied Physics Letters, 1995, 66[23], 3158-60