The gettering of Cu by the keV implantation of Ge was investigated. The Ge was implanted, at a fixed energy and to various doses, into the front surface of Si samples. The Cu was thermally evaporated from the reverse side of the samples, and annealing was then performed at 900C for 1 or 10h in order to permit in-diffusion. Rutherford back-scattering spectroscopy, secondary-ion mass spectroscopy, and cross-sectional transmission electron microscopy demonstrated that the gettering of Cu was effected by stacking faults which were created by heavy doses of implanted Ge, and solid-phase epitaxy.

C.J.Barbero, J.W.Corbett, C.Deng, Z.Atzmon: Journal of Applied Physics, 1995, 78[5], 3012-4