Neutral molecular mass spectrometric, secondary ion mass spectrometric, and thermal desorption spectroscopic studies were made of D-trapping in monocrystalline material after bombardment to fluences of between 1015 and 1017/cm2. The formation of SiD- and SiD2-complexes was detected. The accumulation of these complexes did not begin within the mean projected range of the implanted ions, but at the irradiated surface. Their profiles widened into the bulk with increasing fluence.

M.A.Lomidze, A.E.Gorodetsky, A.P.Zakharov: Radiation Effects and Defects in Solids, 1995, 133[1], 81-6