A phenomenological model was proposed for the dependence of deformation processes upon the implantation conditions. Data on the amorphization of Si by implantation with Ne, Ar or Kr ions, at temperatures of between 150 and 500K and current densities of 0.5 to 4A/cm2, were presented. It was found that the model described well the physical processes which occurred during implantation. Although the model did not make it possible to determine the type of defects which took part in amorphization, it permitted the estimation of parameters such as the activation energy and jump frequency. In the case of Si, it was suggested that some 5 exponents would be required in order to analyze the amorphization results.

P.V.Zukovski, K.Kiszczak, D.Maczka, A.Latuszynski: Radiation Effects and Defects in Solids, 1994, 132[1], 11-8