Room-temperature photoluminescence measurements were carried out in order to study the effect of thermal annealing upon P-implanted wafers. The measurements were performed at near-bandgap excitation by using a Nd:YAG laser that was operated  at 1.06. Photoluminescence measurements were also carried out by using 0.488 laser excitation. It was found that the implantation conditions (dose, energy) and annealing temperature strongly affected the intensity of the photoluminescence signal.

A.Othonos, C.Christofides: Journal of Applied Physics, 1995, 78[2], 796-800