It was shown that the addition of dichlorosilane, to the silane which was used in the deposition of amorphous hydrogenated and chlorinated materials, affected the defect annealing energy distributions. Thus, the size of the defect pool (which was characterized by the saturated defect density under intense pulsed laser illumination) was reduced by more than an order of magnitude when 20% of SiH2Cl2 was added to the SiH4. With increasing additions, the peak of the annealing energy distribution shifted to higher  energies, and the width of the pool increased. The results were explained in terms of the effect of the chlorinated species upon the film properties during deposition, and thus upon the incorporation of Cl into the network.

I.S.Osborne, N.Hata, A.Matsuda: Japanese Journal of Applied Physics, 1995, 34[II-2A], L159-62