The gettering of ion-implanted Au to defects was studied by using Rutherford back-scattering and channelling, and transmission electron microscopy. The damage which arose from Si implantation annealed into dislocations which could efficiently trap the diffusing Au. The damage which was introduced by H implantation evolved into cavities during annealing and gettered nearly 100% of the Au; leaving very little in solution. This process was driven by the diffusion of a supersaturated solid solution of Au into a favorable sink. The internal surfaces of cavities were the most favorable sinks; followed by dislocations, and then the outer surfaces.

J.Wong-Leung, E.Nygren, J.S.Williams: Applied Physics Letters, 1995, 67[3], 416-8