By using a Tersoff-type empirical potential energy function, the free energy of formation of micro-voids which contained between 1 and 57 vacancies was calculated as a function of temperature and vacancy supersaturation. The results applied equally well to micro-void nucleation during crystal growth and, at low temperatures, during ion implantation. The results indicated that homogeneous nucleation was an unlikely process in the case of crystal growth, where heterogeneous nucleation via adsorbate attachment to the micro-void surface was a much more likely process.

N.Cuendet, T.Halicioglu, W.A.Tiller: Applied Physics Letters, 1995, 67[8], 1063-5