Experimental investigations were made of the growth and properties of amorphous hydrogenated material that had been prepared by alternately using thermal chemical vapor deposition from disilane, and H plasma treatment. It was found that H-plasma treatment introduced significant structural relaxation of the Si network, in addition to the passivation of Si dangling bonds. The effective thickness of this passivated layer was estimated to be 22nm. Neutral Si dangling bond states and negatively charged dangling bond-like defect states existed in undoped H-plasma treated chemical vapor deposited amorphous hydrogenated material. The light-induced changes in defect density were small. The Gaussian distribution of the annealing energies of the light-induced defects shifted to higher energy, when compared with that of normal samples.

I.Sakata, M.Yamanaka, T.Sekigawa, Y.Hayashi: Solid State Phenomena, 1995, 44-46, 127-34