A model was proposed for the annealing of implantation-induced structural disorder. It was based upon a physical analogy between point defect cluster formation/dissolution in a crystal, and droplet condensation/evaporation in a saturated vapor. Explicit relationships were obtained for the diffusion broadening and drift of the dopant profile during disorder annealing. The predictions of the droplet model were compared with experimental data on B in Si and were found to be accurate, to within less than a factor of 2, at temperatures which ranged from 800 to 1050C.

A.O.Konstantinov: Applied Physics Letters, 1995, 67[3], 356-8