The mechanism of oxidation-induced stacking fault formation in Czochralski crystals was investigated by means of transmission electron microscopy. It was observed that the stacking faults were always generated at one of the <110> edges of platelet O precipitates. Such platelet O precipitates were associated with an expansive strain field that was normal to the plate. It was suggested that Si self-interstitials (and associated compressive strains) were attracted to the expansive strain field of the precipitates, and condensed to form stacking faults.

S.Sadamitsu, M.Okui, K.Sueoka, K.Marsden, T.Shigematsu: Japanese Journal of Applied Physics, 1995, 34[II-5B], L597-9