It was noted that the properties of low-threshold II-VI blue/green lasers were degraded by dark-line defects which were caused by stacking faults or point defects. In order to improve laser reliability, a study was made of the molecular beam epitaxial growth and device characteristics of II-VI quantum-well lasers which were grown with the (511)A orientation. It was found that the photoluminescence spectra of the (511)A epilayers always exhibited stronger and sharper emission peaks than did their (100) counterparts; thus indicating that fewer defects were incorporated into the (511)A epilayers.

I.W.Tao, Y.Wang, M.Jurkovic, W.I.Wang: Journal of Applied Physics, 1995, 78[4], 2851-3