Temperature variations in the intensity of the photo-stimulated luminescence of Eu-doped material were investigated after ultra-violet irradiation. The results showed that the photo-stimulated luminescence intensity was independent of temperature, whereas the storage ability was temperature dependent. The data supported a photo-stimulated luminescence mechanism which involved F-center plus interstitial-halogen pairs.

X.Zhang, Y.Wang, J.Liu, G.Zhang, G.Xiong, X.Xu: Journal of Applied Physics, 1995, 78[3], 1984-6