The point defect disorder of non-stoichiometric material was studied by using coulometric titration techniques. The electronic and ionic conductivities were measured at 170C, under O partial pressures of up to 75bar. It was found that, when Ag was present in excess, the material was an n-type semiconductor in which neutral O vacancies, VOx, were the predominant defects.

A.Wöhnke, R.Haul, H.Schmalzried: Zeitschrift für Physikalische Chemie, 1994, 186[II], 215-26