Thin films of Cu3Ba2YO7 on MgO were irradiated with 50keV 2H+ ions to a dose of 1016/cm2 at room temperature. The 360nm- to 420nm-thick, and mainly c-axis textured films, were deposited by sputtering onto <100> MgO substrates. The as-implanted sample was divided into several pieces and was annealed in a flowing O ambient. This involved either rapid thermal annealing, at temperatures of between 450 and 940C, or conventional annealing at temperatures of between 100 and 350C. Secondary-ion mass spectroscopic analyses showed that the implanted 2H was a fast diffuser in the Cu3Ba2YO7. The apparent activation temperature and energy for 2H release from the initial traps within the Cu3Ba2YO7 film during annealing were estimated be 175C and 0.97eV, respectively. These were lower than the values (550C and 1.78eV) for 2H release from the initial traps within the MgO substrate. At 200C, the diffusivity of 2H in the Cu3Ba2YO7 film was estimated to be about 1.4 x 10-13cm2/s. In irradiated MgO, the migration and release of 2H during annealing was thought to be radiation-enhanced around more highly damaged regions. No diffusional broadening, or diffusion tails towards the deep undamaged region, were observed.

Y.Li, J.A.Kilner, T.J.Tate, M.J.Lee, Y.H.Li, R.E.Somekh, P.Przyslupski: Journal of Applied Physics, 1995, 78[1], 344-52