The location of implanted As atoms in the oxide matrix was considered on the basis of experimental data on avalanche injection. A model was proposed in which As atoms substituted for Si at 2 different sites in an O-deficient oxide network. Under an additional supply of O, which was still insufficient to obtain a fully oxidized system, the As again tended to occupy Si sites; but interstitial As atoms could also be present. In the case of a fully oxidized network, the As was also oxidized; in that the As was again incorporated at Si sites. Within the framework of this model, contradictory published results on As diffusion in this oxide could be explained in a consistent manner.

S.Alexandrova: Journal of Applied Physics, 1995, 78[3], 1514-8