Films were synthesized by means of hot-filament chemical vapor deposition onto Si(100) substrates which had been given a surface biasing pre-treatment. Evidence was obtained, from high-resolution cross-sectional electron microscopy, to show that films which had been grown onto Si wafers exhibited localized epitaxy. There was an angle of about 7.3 between Si(100) and C(100) hetero-epitaxial crystalline planes. The same type of twins (coherent twin boundaries of the type:  = 3) existed on, and near to, the interface. It was shown that pre-treatment of the substrate was a key factor in the localized hetero-epitaxial deposition of diamond films onto Si wafers.

J.Yang, Z.Lin, L.Wang, S.Jin, Z.Zhang: Journal of Physics D, 1995, 28[6], 1153-7