A deep-level transient spectroscopic study was made of native or radiation-induced defects in metalorganic chemical vapor deposited n-on-p 6H diodes. Majority carrier levels were found at Ev + 0.50, Ev + 0.55 and Ev + 0.69eV, and minority carrier deep levels were found at Ec - 0.38, Ec - 0.48 and Ec - 0.58eV. These 6 levels were initially observed in unirradiated samples. Their concentrations increased by between 2 and 13 times during irradiation with 5.5MeV alpha particles to a fluence of 2 x 1011/cm2. Carrier removal was also monitored during irradiation, and a removal rate of 7800/cm was measured. When compared with a similar study of alpha-irradiated InP, the results suggested that the 2 materials possessed a comparable radiation resistance.

G.C.Rybicki: Journal of Applied Physics, 1995, 78[5], 2996-3000