The migration of Pt in thin Cu films was studied, by means of Rutherford back-scattering spectrometry, at temperatures of between 200 and 290C (figure 10) or at room temperature. In the former regime, the product of enrichment ratio, grain boundary width and grain boundary diffusion coefficient (figure 11) was deduced by using Whipple’s model. In the latter case, the absolute value of the grain boundary diffusivity of Pt in Cu was estimated. By extrapolating from one regime to the other, it was then possible to deduce the value of the product of the enrichment ratio and grain boundary width.

A.N.Aleshin, V.K.Egorov, B.S.Bokstein, P.V.Kurkin: Journal of Applied Physics, 1995, 77[12], 6239-43