The free defect production efficiency (number of freely migrating defects, divided by the total number of displacements) was estimated for 4MeV Cu ion bombardment, as compared with 1MeV electron irradiation, by means of loop growth measurements. It was found that the efficiency that was estimated by means of sequential electron and ion bombardment was close to that which was deduced from radiation-induced segregation and radiation-enhanced diffusion data.

T.Muroga, K.Mihara, H.Watanabe, N.Yoshida: Journal of Nuclear Materials, 1994, 212-215[A], 203-6