Five distinct types of micro-defect in Czochralski-type Si were identified according to their detectability, concentration, spatial distribution, and conditions for growth. It was shown that the distribution of secondary micro-defects, which were introduced by the heat treatment of Si wafers, was closely related to the grown-in defect structure.

A.M.Eidenzon, N.I.Puzanov: Neorganicheskie Materialy, 1995, 31[4], 435-43 (Inorganic Materials, 1995, 31[4], 401-9)