Defect structures near to planar sinks were analyzed in terms of the competition of 2 effects. One of these was the cascade localization-induced bias effect, which led to vacancy-dominant point defect reactions during cascade damage. The other effect was a stochastic fluctuation of reactions between defect clusters and freely migrating point defects. The sink geometry also played an important role. The strength of the 2 effects was analyzed as a function of the distance from a planar sink, and the existence of a vacancy-predominant volume near to the sink was confirmed.

T.Yoshiie, M.Kiritani: Journal of Nuclear Materials, 1994, 212-5[A], 315-9