The method of cross-sectional scanning tunnelling microscopy was described with regard to the study of III-V semiconductor systems. The physical properties which were studied included alloy clustering, interface roughness, band off-sets, quantum sub-bands and point defects. In each case, the method permitted the observation of structural features at the atomic scale.

R.M.Feenstra: Semiconductor Science and Technology, 1994, 9[12], 2157-68