Scanning electron microscopic panchromatic cathodoluminescence methods were used to investigate extended crystal defects in (111) bulk crystals and homo-epitaxial layers which had been grown by liquid-phase epitaxy. Good defect images were obtained by using a very simple experimental set-up which involved the use of a Si photo-diode at room temperature. The bulk crystals were found to be affected by dislocations which were arranged in cellular structures, lineages that were roughly parallel to [110] directions, [110] slip bands and precipitates. The homo-epitaxial layers contained dislocations, precipitates and inclusions of growth solution. The wavy morphology which was typical of layers that were grown by liquid-phase epitaxy did not give rise to any cathodoluminescence contrast.

G.Salviati, P.Franzosi, M.Scaffardi, S.Bernardi: Applied Physics Letters, 1994, 65[25], 3257-9